Characterization and modeling of 1200V – 100A N – channel 4H-SiC MOSFET
نویسندگان
چکیده
The static characteristics of CREE 1200V/100A 4H-SiC MOSFET have been fully characterized at temperatures ranging from 0°C to 150°C. The distinct characteristics of high power SiC MOSFET compared with the silicon counterparts are analyzed and explained. A novel physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER software to express the I-V characteristics. The influences of the geometry (short channel effects), channel mobility, temperature and the threshold voltage on transistor properties have been taken into account. The parameters used to define the device were extracted from measurements and datasheet. Keywords—Device characterization, analytical model, modeling, simulation, SiC, MOSFET
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